Abstract

We demonstrate the DC-Kerr effect in plasma enhanced chemical vapor deposition (PECVD) silicon-rich nitride (SRN) and use it to demonstrate a third order nonlinear susceptibility, ${\chi ^{(3)}}$, as high as $({6} \pm {0.58}) \times {{10}^{- 19}}\;{{\rm m}^2}/{{\rm V}^2}$. We employ spectral shift versus applied voltage measurements in a racetrack resonator as a tool to characterize the nonlinear susceptibilities of these films. In doing so, we demonstrate a ${\chi ^{(3)}}$ larger than that of silicon and argue that PECVD SRN can provide a versatile platform for employing optical phase shifters while maintaining a low thermal budget using a deposition technique readily available in CMOS process flows.

© 2021 Optical Society of America

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