Abstract
High-index dielectric nanostructures are of particular interest for nanoscale lasing due to their low absorption losses. However, the relatively weak near-field restricts the isolated dielectric cavities as low-threshold integrated on-chip laser sources. Here, we demonstrate lasing action in a silicon nanowire pair with 32 nm gap coated with dye-doped shell on the silicon-on-insulator platform. It is found that the quality factor Q is dominated by the coupling of the silicon nanowire pair, which depends on the gap size, the nanowire width, and the dye thickness. A lasing peak at the wavelength of 529 nm with FWHM of 0.6 nm is experimentally realized by the Si nanowire pair width, and the corresponding pumping power threshold is ∼34 µW/cm2. The proposed strategy, based on the well-established Si planar process, lays the groundwork for practical integrated nanolasers that have potential applications in photonic circuits.
© 2022 Optica Publishing Group
Full Article | PDF ArticleMore Like This
Cheng-Yi Fang, Si Hui Pan, Felipe Vallini, Antti Tukiainen, Jari Lyytikäinen, Gustav Nylund, Boubacar Kanté, Mircea Guina, Abdelkrim El Amili, and Yeshaiahu Fainman
Opt. Lett. 44(15) 3669-3672 (2019)
Suneetha Sebastian, M. Kailasnath, V. P. N. Nampoori, and S. Asokan
Opt. Lett. 42(19) 3820-3823 (2017)
Mitsunori Saito, Takuya Hashimoto, and Jumpei Taniguchi
Opt. Lett. 42(20) 4119-4122 (2017)