Abstract

We successfully achieved high-Q dual-band quasi-bound states in the continuum (BICs) by introducing geometrical perturbations and thermally induced material perturbations into silicon half-disk nanodimers. Importantly, it is found that the Q factor obtained from the thermally induced material perturbations fits better with the inverse quadratic function of the asymmetry relation than that of the geometrical-perturbations-based system. Notably, we demonstrated that changes occurring at the sub-K scale can enable the simultaneous realization of the full width at half maximum offset distance for quasi-BICs and a maximum contrast ratio exceeding 44 dB. Our research provides novel, to the best of our knowledge, insights for potential applications in nano-lasers, temperature sensors, and infrared imaging.

© 2023 Optica Publishing Group

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