Abstract
Excited carrier dynamics in GaAs and AIGaAs directly affect the characteristics and performance of optical and electronic devices fabricated from these materials. Previous investigators have examined intervalley scattering using pump-probe, transient mobility, and luminescence measurements.1-3 We describe femtosecond pump-probe studies of excited carrier dynamics in AlxGa1-xAs using a tunable laser system.
© 1988 Optical Society of America
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