Abstract

Intervalley scattering in AIGaAs lias been studied by a variety of techniques. Subpicosecond and cw luminescence spectroscopy¹'^1, and femtosecond absorption saturation^3,4 measurements have been used in attempts to determine the intervalley scattering rates and deformation potentials. Although these measurements were the first to set limits on the intervalley scattering rates, they do not directly measure the Lntervalley scattering from the initial optically excited states, and discrepancies exist between reported values. Most of these investigations measure the return of carriers from the sa teilt te valleys bv probing the occupancy of the P valley at energies near the conduction band edge. These measurements are strongly affected by inelastic scattering with the T valley.⁵

© 1992 Optical Society of America