Abstract
Thin film platinum silicide/p-type silicon Schottky barrier diode arrays have emerged as a leading technology for IR imaging in the 3–5-μm wavelength range. A number of ballistic transport models incorporating multiple adjustable parameters have been developed to describe the variation of the internal photoresponse of the individual diodes in such arrays with silicide layer thickness and incident photon energy.
© 1989 Optical Society of America
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