Abstract
The use of silicon-germanium heterostructures permits the realization of Si-based optoelectronic detectors in the 1-3 μm wavelength regime.1,2 in addition, silicon-on-insulator (SOI) structures are useful for Si-based integrated optoelectronics because the buried oxide layer forms a low-index waveguiding region, thus permitting the engineering of integrated optoelectronic device structures.
© 1991 Optical Society of America
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