Abstract
Photodetectors for long-wavelength operation have been realized on silicon as discrete devices1–2 in combination with SOI waveguides3 and in combination with SiGe waveguides as MSM diodes.4 In this work the lateral MSM diodes have been replaced by vertical P-I-N diodes with a similar SiGe multiple-quantum-well structure that maintains a low reflection coefficient at the waveguide-photodetector transition, which is important for applications with respect to an optical coherent receiver. The P-I-N diodes permit lower dark currents and higher internal electric fields than can be obtained with MSM diodes having Schottky barriers of approximately 0.5 eV.
© 1993 Optical Society of America
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