Abstract
The photorefractive effect is usually described by a band-transport model in which photoexcited electrons or holes move by means of ohmic drift or diffusion. A direct measurement of a key parameter, charge-carrier mobility, has been achieved only recently in any photorefractive insulator by using a holographic time-of-flight technique.1,2 Here we report the first direct measurements of electron mobility as a function of temperature in photorefractive Bi12SiO20 (BSO).
© 1991 Optical Society of America
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