Abstract
Despite their great potential, realization of semiconductor photorefractive devices has been hindered by small nonlinearities (e.g., two-beam-coupling gain coefficient and diffraction efficiency), a result of the small Pockels electro-optic coefficients of semiconductors. To enhance the nonlinearities, methods to increase the space-charge electric field (such as application of an ac or dc electric field, the moving grating technique, or a temperature-dependent resonance) have been used.
© 1991 Optical Society of America
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