Abstract
The long wavelength GaInAsP/InP surf ace- emitting (SE) laser is expected to become one of the important light sources for near future optical communication systems. We demonstrated the first SE laser grown by chemical beam epitaxy (CBE),1 and by applying some improvements such as a low-loss p-contact layer and a hybrid mirror, we also achieved room temperature (R.T.) pulsed operation exhibiting the lowest threshold current density1 The highest operation temperature of the GalnAsP/InP SE lasers reported is 144'C by optically pumping3 and 66°C by current injection under pulsed operation,* But under cw condition, the highest temperature is only 135-K.4
© 1993 Optical Society of America
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