Low Threshold Room Temperature Pulsed and −31 °C CW Operations of 1.3 µm GaInAsP/InP Buried Heterostructure Surface Emitting Lasers

T. Baba; Y. Yogo; K. Suzuki; F. Koyama; K. Iga

doi:10.1364/OFC.1993.PD28

Conference on Optical Fiber Communication/International Conference on Integrated Optics and Optical Fiber Communication
1993 OSA Technical Digest Series (Optica Publishing Group, 1993),
paper PD28
•https://doi.org/10.1364/OFC.1993.PD28

Low Threshold Room Temperature Pulsed and −31 °C CW Operations of 1.3 µm GaInAsP/InP Buried Heterostructure Surface Emitting Lasers

T. Baba, Y. Yogo, K. Suzuki, F. Koyama, and K. Iga

Optical Fiber Communication Conference 1993

San Jose, California United States
ISBN: 1-55752-282-0

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T. Baba, Y. Yogo, K. Suzuki, F. Koyama, and K. Iga, "Low Threshold Room Temperature Pulsed and −31 °C CW Operations of 1.3 µm GaInAsP/InP Buried Heterostructure Surface Emitting Lasers," in Conference on Optical Fiber Communication/International Conference on Integrated Optics and Optical Fiber Communication, Vol. 4 of 1993 OSA Technical Digest Series (Optica Publishing Group, 1993), paper PD28.

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Abstract

GalnAsP/InP vertical cavity surface emitting laser diodes (SELDs)^1-4 are attracting much interest for new era optical fiber communication systems and optical interconnects. Although good performance has been shown by optical pumping,^5,6 the threshold current of injection devices at room temperature was still higher than that of edge emitting lasers, and the highest cw lasing temperature was — 138°C.⁴ In this study, we have drastically improved the performance of 1.3 µm GalnAsP/InP SELD.

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