Abstract
InGaAs heterostructures are widely used in high speed devices such as lasers, modulators, and HBTs. Optimization of these devices' performance requires a detailed understanding of carrier relaxation dynamics. It has been predicted, however, that due to quantum confinement effects, carrier relaxation depends critically on the width of ultra thin layers, L. Gain recovery dynamics have been studied in InGaAs traveling'wave optical amplifiers using single wavelength femtosecond optical pumpprobe measurements.1·2 As these were single wavelength measurements interpretation of the results is difficult. As shown in Fig. 1, using an ultrashort pulse infrared broad band continuum probe3 to follow the carrier location in k-space, we have measured, with 150-fs resolution, the dynamics of optically injected carriers in InGaAs vs. L, from the almost 2-D case, L « a0, to the 3D case, L » a0 where a0 — 290 Å is the exciton Bohr radius.
© 1994 Optical Society of America
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