Abstract
A long-wavelength surface-emitting (SE) laser is expected to be one of important light sources for future large capacity parallel networks and optical interconnects. In recent years, GaInAsP/InP SE lasers have been much investigated.1 However, it is important to design the optimum laser structure for further improvements of the laser characteristics. In this study, we have examined the effect of inter-valence band absorption (IVBA) loss at the p-cladding layer on the lasing characteristics of long-wavelength SE lasers. The lateral uniformity of the current injection is also discussed to optimize the p-cladding layer structure.
© 1995 IEEE
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