Abstract
InGaAs/GaAs strained quantum wells grown on GaAs (111)-oriented substrates are attractive for nonlinear optical de vices because the large piezoelectric field along the growth direction.1 The nonlinear optical properties of multiple quantum wells (MQW) structures are due to photocarriers that have escaped the wells and moved to screen the entire MQW.2 There is not reports on the carrier dynamics of the piezoelectric field screening in a single quantum well (SQW).
© 1995 IEEE
PDF ArticleMore Like This
X. R. Huang, D. R. Harken, A. N. Cartwright, Arthur L. Smirl, J. L. Sanchez-Rojas, A. Sacedon, E. Calleja, and E. Muñoz
CFB5 Conference on Lasers and Electro-Optics (CLEO:S&I) 1995
X. R. Huang, A. N. Cartwright, D. S. McCallum, D. R. Harken, Arthur L. Smirl, J. L. Sánchez-Rojas, A. Sacedón, E. Calleja, and E. Muñoz
QThE8 Quantum Optoelectronics (QOE) 1995
C. H. Molloy, X. Chen, D. A. Woolf, D. J. Somerford, and P. Blood
CTuF2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1995