Abstract
InGaAs/GaAs strained-layer quantum well structures grown on non-(00l) oriented substrates are of fundamental interest for a variety of nonlinear optical elements. We have studied the photoluminescence of InGaAs/GaAs (lll)B single quantum well structures with 25% Indium mole fraction. The InGaAs/GaAs quantum well structures were grown by molecular beam epitaxy on (111)B substrates misoriented 2° towards to (100) direction.
© 1996 Optical Society of America
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