Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Electrode Thickness Dependence of GaAs based Photovoltaic Device Characteristics for Optical Wireless Power Transmission

Not Accessible

Your library or personal account may give you access

Abstract

We experimentally investigated the mesh shaped electrode thickness dependence of GaAs based photovoltaic device under laser irradiation. Thick electrode was effective to increase the fill factor even under partial irradiation.

© 2022 IEEE

PDF Article
More Like This
Post-Growth Annealing and InGaSb Layer Insertion Effects on Metamorphic InAsSb on GaAs Substrate

Koki Hombu, Shota Nakagawa, Yuto Iwakiri, Koji Maeda, and Masakazu Arai
CMP11A_05 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2022

Patch-Type Wireless Power Transfer System Based on Electromagnetic Wave Focusing Metasurface for Bioimplantable Devices

Semin Jo, Wonwoo Lee, and Hojin Lee
FF2D.2 CLEO: QELS_Fundamental Science (CLEO:FS) 2022

Lasing Characteristics Dependence on In Composition of 850 nm (In)GaAs TQWs VCSELs with Low Power Consumption for Optical Interconnects

T. Kondo, K. Takeda, and H. Nakayama
TuPK_10 OptoElectronics and Communications Conference and Photonics in Switching (OECC) 2013

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.