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Conferences > CLEOPR > 2022 > CMP11A > CMP11A_05

Post-Growth Annealing and InGaSb Layer Insertion Effects on Metamorphic InAsSb on GaAs Substrate

Koki Hombu, Shota Nakagawa, Yuto Iwakiri, Koji Maeda, and Masakazu Arai

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Abstract

We investigated the effect of post-growth annealing on metamorphic InAsSb on GaAs. The mid-infrared range photoluminescence intensity was improved, however, the surface flatness was deteriorated. The photoluminescence was also improved by inserting the InGaSb layer.

© 2022 IEEE

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