Abstract
We demonstrated the bonding of thin film InP and Si using wafer direct bonding technique, described the heating process of the InP-Si directly attached substrate. The evaluation of the prepared InP-Si substrate by observing the surface state with Nomarski-mode images is better than previous annealing sequence. We have successfully obtained lasing characteristics of GaInAsP MQW LD using this substrate.
© 2022 IEEE
PDF ArticleMore Like This
Periyanayagam Gandhi Kallarasan, Naoki Kamada, Yuya Onuki, Kazuki Uchida, Hirokazu Sugiyama, Xu Han, Natsuki Hayasaka, Masaki Aikawa, and Kazuhiko Shimomura
JTu2A.12 CLEO: Applications and Technology (CLEO:A&T) 2018
Gandhi Kallarasan, Tetsuo Nishiyama, Kamada Naoki, Yuya Onuki, and Kazuhiko Shimomura
16p_C301_4 JSAP-OSA Joint Symposia (JSAP) 2016
Hirokazu Sugiyama, Tetsuo Nishiyama, Naoki Kamada, Yuya Onuki, Xu Han, Gandhi Kallarasan Periyanayagam, Masaki Aikawa, Natsuki Hayasaka, Kazuki Uchida, and Kazuhiko Shimomura
s2356 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2017