Abstract
Since their first demonstration in 2002 [1], THz quantum cascade lasers (QCLs) had an impressive impact on the field of THz optics, due to the unique mix of properties they feature, namely mW output power and compactness. On the other hand, unlike low–power THz optoelectronic emitters, that ideally combine with low noise coherent detection schemes [2], THz QCLs still suffer from the lack of convenient detectors. THz power detectors, such as semiconductor bolometers, pyroelectric detectors, and golay-cells are either slow, or scarcely sensitive, or require cryogenic cooling. Room-temperature heterodyne detection schemes give access to fast response and high signal dynamics, but local oscillators are in general cumbersome or poorly tunable [3-5]. Fast electronic THz detectors, such as field effect transistors (FET), represent a novel promising detection approach, featuring fast response times and high sensitivity in the hundreds of GHz range [6]. The recent introduction of a high-electron mobility semiconductor nanowire as transistor channel has allowed extending the operating frequency range above 1 THz, with an impressive noise equivalent power, making them attractive devices for THz QCL detection [7,8].
© 2013 IEEE
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