Abstract
An optoelectronic readout method for reading the state of STT-RAM cells based on plasmon drag effect is proposed. Our simulations show that the proposed scheme can achieve up to 29.6 Gbit/sec readout speed.
© 2021 The Author(s)
PDF ArticleMore Like This
Qiancheng Zhao, Mohsen Rajaei, Ilya Krivorotov, Mikael Nilsson, Nader Bagherzadeh, and Ozdal Boyraz
FM3B.2 CLEO: QELS_Fundamental Science (CLEO:FS) 2016
Parinaz Sadri-Moshkenani, Mohammad Wahiduzzaman Khan, Md Shafiqul Islam, Ilya Krivorotov, Mikael Nilsson, Nader Bagherzadeh, and Ozdal Boyraz
JW2A.60 CLEO: Applications and Technology (CLEO:A&T) 2019
M. Durach, M. LePain, V. Rono, and N. Noginova
FTu3B.2 CLEO: QELS_Fundamental Science (CLEO:FS) 2016