Abstract
The accumulation of electron-hole charge within a strained piezoelectric quantum well establishes a dipole which opposes the strain-generated electric field [1]. Such structures therefore exhibit a carrier-density dependent blue-shift of the inter-band transitions [1,2]. In this paper this field-screening process is studied using forward-biased current injection in strained piezoelectric quantum well lasers. The implications of the findings for various optoelectronic applications are outlined.
© 1996 Optical Society of America
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