Abstract
The intrinsic and extrinsic optical properties of semiconductor quantum-well structures (QWSs) are currently attracting much interest.1,2 However, the nature of the absorption spectrum well below the band edge has not yet been explored in QWSs. This Urbach absorption tail reflects broadening of excitons and electronic states due to interaction with phonons and defects.3 We present here the first investigation of the room-temperature below band gap absorption in GaAs/AIGaAs QWSs. The comparison of intrinsic and proton- bombarded samples reveals the influence of defects on the absorption tail.
© 1986 Optical Society of America
PDF ArticleMore Like This
R. Raj, B.G. Sfez, D. Pellat, and J.L. Oudar
ThC24 International Conference on Ultrafast Phenomena (UP) 1992
A. C. Von Lehmen
THB2 OSA Annual Meeting (FIO) 1986
K. TAI, B. J. FISCHER, RICHARD E. SLUSHER, A. Y. CHO, and A. MYSYROWICZ
MBB4 Quantum Electronics and Laser Science Conference (CLEO:FS) 1989