Abstract

To fabricate a Si film by CVD (chemical vapor deposition) with excimer laser, Si2H6 is widely employed as a material gas. This gas is photo-decomposed through single-photon absorption at every area on the light-path when irradiating with ArF laser beam. For this reason, decomposition efficiency of the material gas is high. It is, however, very diffcult to effectively fabricate a film with an intermediate product^[1,2]. Moreover, the photo-decomposition occurs exceedingly in the neighborhood of the incident window for a laser light, which enhances deposition of film onto the window. The film deposited intercepts the laser light to enter, inevitably letting down the efficiency of film formation.

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