Abstract
Recently, second-order nonlinear optical techniques like Second Harmonic Generation (SHG) have been developed as new and extremely versatile tools for the investigation of the geometric and electronic structure of surfaces and interfaces. We have studied the epitaxial growth of Ga on Si(111) by SHG, and are able to correlate the observed resonance behaviour to the electronic structure of the Si-Ga interface.
© 1992 IQEC
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