Abstract
The monolithic integration of optical III-V Laser Diode (LD) especially InP based LD is a predominant factor in the actualization of light sources on the silicon platform. We have proposed the monolithic integration of III-V LD epitaxial layers on the wafer-bonded InP/Si substrate via MOVPE. Our unique approach is that we do the adhesion of thin film InP and Si substrate before the MOVPE growth. We have already shown the successful demonstration of GaInAsP LD on InP/Si substrate.[1-2] In this paper, we report the room temperature lasing operation of 1.5 μm GaInAsP LD on InP/Si substrate resulting in the lowest threshold current density at the room temperature.
© 2017 Japan Society of Applied Physics, Optical Society of America
PDF ArticleMore Like This
Periyanayagam Gandhi Kallarasan, Tetsuo Nishiyama, Naoki Kamada, Yuya Onuki, and Kazuhiko Shimomura
JTu5A.108 CLEO: Applications and Technology (CLEO:A&T) 2017
Kazuki Uchida, Tetsuo Nishiyama, Naoki Kamada, Yuya Onuki, Xu Han, Gandhi Kallarasan Periyanayagam, Hirokazu Sugiyama, Masaki Aikawa, Natsuki Hayasaka, and Kazuhiko Shimomura
s2484 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2017
Periyanayagam Gandhi Kallarasan, Naoki Kamada, Yuya Onuki, Kazuki Uchida, Hirokazu Sugiyama, Xu Han, Natsuki Hayasaka, Masaki Aikawa, and Kazuhiko Shimomura
JTu2A.12 CLEO: Applications and Technology (CLEO:A&T) 2018