Abstract
This study examines the effect of exposing thin films of SiO2 and ThF4 to gaseous XeF2 and energetic electrons. These systems are of interest to VLSI and optical coatings technology. The experiments were done in a stainless steel UHV chamber with Auger Electron Spectroscopy (AES) and Quadrupole Mass Spectroscopy capabilities. Changes in the mass of the thin films was measured with a sensitive, thermally stabilized quartz crystal microbalance. Details of the equipment and procedure are given elsewhere.1
© 1985 Optical Society of America
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