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Conferences > MSBA > 1987 > WC > WC4

Multiphoton Ionization Mass Spectrometric Detection of Gas Phase Radicals Produced in the Spontaneous Etching Reaction of Silicon by XeF2

J. A. Dagata, D. W. Squire, C. S. Dulcey, D. S. Y. Hsu, and M. C. Lin

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Abstract

We have recently demonstrated selective detection of SiF and SiF2 radicals produced in the reaction of F2 and NF3 with silicon in a flow system using multiphoton ionization mass spectrometry (MPI/MS)1. In this paper we report results for the spontaneous surface etching reaction of p-doped (110) and uncharacterized silicon single crystals by XeF2 over a wide range of temperatures (300-1000 K) and pressures (10-6 to 10-4 Torr). We have found that under single collison conditions SiF2 is the only gas phase radical produced in the surface reaction of XeF2 and silicon. The activation energy for producing gas phase SiF2, Ea[SiF2], is about 6.0 kcal/mol.

© 1987 Optical Society of America

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