Abstract
Disilane, Si2H6, is a promising precursor for the low-temperature deposition of Si films by chemical vapor deposition (CVD) and uv-laser-induced CVD (LCVD). It has a higher reactivity on Si surfaces and a lower decomposition temperature as well as a larger uv absorption cross section than silane (SiH4).(1) We have investigated adsorption kinetics and thermally-induced reactions of Si2H6 on Si (100)2x1 surfaces using electron energy-loss spectroscopy (EELS) and reflection high-energy electron diffraction (RHEED).
© 1989 Optical Society of America
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