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In phase change optical disks, a phenomenon of micro-material-flow caused the limitation of cycle number. To this issue, it was reported that the nitrogen doping into the recording layer was effective to suppress the micro-material-flow [1]. We successfully determined the concentration of nitrogen atoms in Ge-Sb-Te films [2] by SIMS observations. Based on the result, we quantitatively examined the effect of nitrogen doping on the dynamic disk properties. In this paper, we will present the examination results and discuss the model of nitrogen function in the Ge-Sb-Te recording layer.
© 1998 Optical Society of America
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