Effect of electric field on the growth of Al-film

Cheng-chung Lee; Chii-hua Lee; Shiuh Chao

doi:10.1364/OIC.1992.OThA8

Optical Interference Coatings
Technical Digest Series (Optica Publishing Group, 1992),
paper OThA8
•https://doi.org/10.1364/OIC.1992.OThA8

Effect of electric field on the growth of Al-film

Cheng-chung Lee, Chii-hua Lee, and Shiuh Chao

Optical Interference Coatings 1992

Tucson, Arizona United States
1–5 June 1992
ISBN:

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Energetic Deposition Processes (OThA)

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C. Lee, C. Lee, and S. Chao, "Effect of electric field on the growth of Al-film," in Optical Interference Coatings, Technical Digest Series (Optica Publishing Group, 1992), paper OThA8.

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Abstract

Bias voltage applied to the substrate had been proved to be influential in the growth of gold and silver films¹-² and dielectric film.³

In this article we applied an electric field longitudinal to substrate by setting a high voltage of up to 2.4 KV during the growth of Al-films. (see fig. 1) Al-film was evaporated in high vacuum (10 μ torr) onto 1" diameter BK-7 substrate at room temperature.

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