Abstract
The residual stress of Titanium dioxide (TiO2) and Silicon dioxide (SiO2) films on Silicon (Si) substrates prepared by Ion-Assisted-Deposition (IAD) were systematically investigated. The films were deposited using a Balzers 760 vacuum chamber equipped with a diffusion pump, substrate heaters, optical monitoring, crystal monitoring, and a gridless end-Hall ion source. Substrates were tooled in either a universal planetary drive with 6 planets (dia. 225 mm) or a rotating, umbrella shaped holder (dia. 800mm). A standard electron beam source was used to evaporate the TiO, TiO2, or Ti2O5 starting materials for the TiO2 films. The starting material for the SiO2 thin-films was SiO heated with a resistant source. The end-Hall source produces a broad beam (30° half angle) with relatively high ion current densities (0.3 to 0.5 mA/cm2) at 400mm source to substrate distance.1
© 1995 Optical Society of America
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