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"Fast GaAs photoconductive detectors with high sensitivity integrated in coplanar sytems onto GaAs substrates"

H. Schumacher, U. Salz, and H. Beneking

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Abstract

Hitherto optically activated switches consist of a gap between two metallic contact pads on a semiconductor substrate (fig. 1a). To gain a low "On"-resistance a focused laser beam of relatively high intensity has to be applied.

© 1987 Optical Society of America

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