Abstract
Picosecond photoconductive-switch performance was demonstrated with a novel material deposited by molecular beam epitaxy at low substrate temperatures using Ga and As4 beam fluxes. For a photoconductive-gap switch fabricated on a coplanar transmission line, the speed is 1.6 ps (full width at half maximum) and the voltage response is 10 to 100 times greater than that of conventional photoconductive switches. Since LT GaAs is compatible with GaAs device and IC technologies, this photoconductive switch may find extensive use in high-speed device and circuit testing.
© 1989 Optical Society of America
PDF ArticleMore Like This
S. GUPTA, J. A. VALDMANIS, GERARD A. MOUROU, F. W. SMITH, and A. R. CALAWA
JI4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1989
J. Allam, K. Ogawa, J. White, N.de B. Baynes, J. R. A. Cleaver, I. Ohbu, T. Tanoue, and T. Mishima
G4 Ultrafast Electronics and Optoelectronics (UEO) 1993
S. Gupta, J. Pamulapati, J. Chwalek, P.K. Bhattacharya, and G. Mourou
ThC9 International Conference on Ultrafast Phenomena (UP) 1990