Abstract
We study the generation of the shortest electrical pulses to date from GaAs-based photoconductors. Typical pulse durations are in the 1-2-ps regime (see Fig. 1). The photoconductive material is produced by low temperature MBE growth and exhibits an unusually high mobility (~200 cm2/V s) for picosecond pulsed photoconductive materials. The pulses were generated using a photoconductive gap in a high speed coplanar transmission line geometry and measured by an external electrooptic sampling technique.
© 1989 Optical Society of America
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