Abstract
This tutorial gives an overview in both epitaxial growth technology and optoelectronic device technology. The fundamentals, unique capabilities, current status, and differences among metalorganic vapor phase epitaxy, molecular beam epitaxy and chemical beam epitaxy will be given. Emphasis will be made on more recent developments such as selective-area-growth for lateral bandgap engineering, and in-situ chemical beam etching/epitaxy with atomic layer control. For the device technology, which is made possible by the powerful growth technique, an overview of the principal of operation, device characteristics and system applications of quantum well lasers in optical fiber communications will be given. Emphasis will be made on recent progress in various advanced laser structures, the strained-layer QW single-frequency lasers, the integrated electroabsorption modulated lasers, the fiber Bragg reflector soli ton-lasers, the 1.48 rum and 0.98 µm pump lasers for optical fiber amplifiers, and the gain-coupled DFB lasers.
© 1995 Optical Society of America
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