Abstract

The current photolithographic methods employ shorter wavelength light for finer resolving power as exemplified in the rapid transition from g-line to i-line steppers now taking place. The application of new technological attempts like phase-shift or partial illumination methods will further pursuit this trend. Then comes the deep-UV lithography with Eximer laser used as the light source, with which it seems possible to attain 0.2 5µm resolution for production LSIs.

© 1992 Optical Society of America