Abstract
This paper discusses the spectral response of silicon p ? n junctions with a thin film of porous
silicon on the surface. It is established that the spectral sensitivity becomes several times
as great in the short-wavelength region of the visible spectrum. The observed effect is explained
by the reduction in the number of active centers in the near-surface layer of single-crystal
silicon that occurs during electrochemical anodization of single-crystal silicon.
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