Heteroepitaxial growth and characterization of compound semiconductors

Qixin Guo

doi:10.1364/ACPC.2014.AW3J.1

Asia Communications and Photonics Conference 2014
OSA Technical Digest (online) (Optica Publishing Group, 2014),
paper AW3J.1
•https://doi.org/10.1364/ACPC.2014.AW3J.1

Heteroepitaxial growth and characterization of compound semiconductors

Qixin Guo

Asia Communications and Photonics Conference 2014

Shanghai China
11–14 November 2014
ISBN: 978-1-55752-852-0

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Growth & Characterization (AW3J)

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Q. Guo, "Heteroepitaxial growth and characterization of compound semiconductors," in Asia Communications and Photonics Conference 2014, OSA Technical Digest (online) (Optica Publishing Group, 2014), paper AW3J.1.

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Abstract

ZnTe layers were successfully grown on (0001) sapphire and GaAs substrates by metalorganic vapor phase epitaxy. The emission of THz radiation with a spectral distribution up to 40 THz was observed from the ZnTe layers. The structural and optical properties of the obtained ZnTe layers were reported.

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