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Heteroepitaxial growth and characterization of compound semiconductors

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Abstract

ZnTe layers were successfully grown on (0001) sapphire and GaAs substrates by metalorganic vapor phase epitaxy. The emission of THz radiation with a spectral distribution up to 40 THz was observed from the ZnTe layers. The structural and optical properties of the obtained ZnTe layers were reported.

© 2014 Optical Society of America

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