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Nanoscale Characterization of Structural and Optical Properties of Nitride Nanostructures Using Helium Temperature Scanning Electron Microscopy Cathodoluminescence

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Abstract

The combination of luminescence spectroscopy - in particular at liquid He temperatures - with the high spatial resolution of a scanning transmission electron microscopy provides a unique, extremely powerful tool for the optical nano-characterization of semiconductors. Typical results which will be presented include nm-scale correlation of the structural and optical properties of different GaN nanorod sample.

© 2014 Optical Society of America

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