Abstract

Injection lasing in the wide band gap II-VI semiconductors was achieved for the first time in our laboratory in April, 1991.¹ Since then considerable effort has been made toward understanding the properties of these laser diodes and constituent materials as well as making progress toward the development of viable devices. We have demonstrated room temperature, pulsed operation in devices with emission wavelengths from 508-535nm. More recently, we have achieved cw operation at 77K. In this paper we will describe the operating characteristics and fundamental parameters of our blue-green laser diodes.

© 1992 Optical Society of America