Abstract

An injection laser is proposed that is capable of emitting coherent radiation in the spectral range from green to ultraviolet. This will be achieved by injecting holes from a p-type substrate through an asymmetric barrier into InN quantum wells, while the electrons will be provided by the host GaN. The electrons will be retained in the region of the quantum wells by the asymmetric barrier. Radiative recombination will occur inside the quantum wells at a wavelength determined by the thickness of the InN layer. The shortest wavelength obtainable in this system is 360 nm, corresponding to recombination across the GaN bandgap. The blue-green spectral region will be readily obtained with InN strained layers.

© 1992 Optical Society of America