Abstract

Laser-assisted photochemical reactions have been developed for etching or depositing materials such as insulators, metals, and semiconductors. Gas phase and surface reactions have been used in the laser-assisted processing techniques to reduce the processing temperatures and fabricate microstructures. However, the gas phase photo-chemical reactions have a disadvantage in the local area processing. This paper reviews a local area epitaxial growth of GaAs by photochemical surface reactions due to the laser irradiation and an analysis of the surface reactions by a rate equation approach.

© 1988 Optical Society of America