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Atomic Layer Growth of GaAs by Pulsed Laser MOVPE

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Abstract

Atomic layer epitaxy has recently been interested in by many workers since the epitaxy seems to be a promising candidate for producing thin epitaxial layers and abrupt interfaces controlled in atomic scale. In this epitaxy As and Ga atoms are alternatively deposited on the GaAs substrate, layer by layer, and it is essential to realize the precise atomic layer epitaxy (SME, Stepwise Monoatomic layer Epitaxy(1)) that the deposition of Ga or As atom should be stopped automatically at the 100 % surface coverage of each atoms.

© 1987 Optical Society of America

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