Abstract

There currently exists a concerted research effort in the field of surface-normal optoelectronic devices for applications involving optical communications, computing, and signal processing. A critical element for many of these applications is a device capable of significant modulation at voltages available from silicon circuitry. Considerable work has been done on asymmetric Fabry-Perot modulators (AFPMs) to increase modulation levels,¹ engineer the devices to work at specific desired wavelengths,² and lower the operational voltage of these devices,³ which has often been near the −10 V mark. The advancements in "flip-chip" and "lift-off" hybrid optoelectronic fabrication⁴ make even more desirable the AFPM, which functions at silicon circuitry levels.

© 1994 Optical Society of America