Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper CMH4

Gain–current characteristics of GaN–AlGaN quantum wells

Not Accessible

Your library or personal account may give you access

Abstract

The ever-improving quality of GaN, AlGaN, and InGaN epitaxial films leads to the prospect of high-performance blue-emitting quantum-well lasers in these material systems in the very near future. We have calculated the gain and spontaneous recombination current for GaN-AlGaN-quantum-well lasers and have estimated the likely threshold current of such devices.

© 1995 Optical Society of America

PDF Article
More Like This
Gain characteristics of InGaN/GaN quantum well diode lasers

Y.-K. Song, M. Kuball, A.V. Nurmikko, G. E. Bulman, K. Doverspike, S.T. Sheppard, T.W. Weeks, M. Leonard, H. S. Kong, H. Dieringer, and J. Edmond
CWD3 Conference on Lasers and Electro-Optics (CLEO) 1998

High TE-Polarized Optical Gain from AlGaN-Delta-GaN Quantum Well for Deep UV Lasers

Jing Zhang, Hongping Zhao, and Nelson Tansu
JTuD4 CLEO: Applications and Technology (CLEO_AT) 2011

AlGaN/GaN Multiple Quantum Wells Grown By Atomic Layer Deposition

M. H. Lo, S.W. Chen, Z.Y. Li., T. C. Lu, H. C. Kuo, and S. C. Wang
CThKK4 Conference on Lasers and Electro-Optics (CLEO) 2008

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2022 | Optica Publishing Group. All Rights Reserved