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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper CThU4

Screening, band filling and band-gap renormalization in piezoelectric quantum well systems

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InGaAs/GaAs strained-layer quantum well structures grown on non-(00l) oriented substrates are of fundamental interest for a variety of nonlinear optical elements. We have studied the photoluminescence of InGaAs/GaAs (lll)B single quantum well structures with 25% Indium mole fraction. The InGaAs/GaAs quantum well structures were grown by molecular beam epitaxy on (111)B substrates misoriented 2° towards to (100) direction.

© 1996 Optical Society of America

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