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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • (Optica Publishing Group, 1998),
  • paper CWN4

Transition from radiative to nonradiative recombination in 1.3-μm and 1.5-μm InGaAs(P) multiple quantum well semiconductor diode lasers

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Abstract

Measurements of the threshold current, Ith as a function of temperature, T were performed on 1.3 μm and 1.5 μm compressively strained lasers from 1To=d(lnIth)dT 90 K to 370 K and the temperature sensitivity parameter, To calculated from In addition, L, the integrated spontaneous emission emanating from the side of the devices, which is proportional to the radiative current, IRad, was collected.

© 1998 Optical Society of America

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