Abstract

On the research level fiber-based optical communication technology has been progressing towards transmission of data rates in a single fiber even in the Tbit/s range. For such highest speed photonic devices fs optical response of the base III-V material is mandatory. It has been shown that MBE growth at low temperatures is a viable way to produce material systems that offer traps suited for fast capture of excited carriers.¹ LT GalnAs/AllnAs MQWs is a promising nonlinear material system for ultrafast optical devices operating in the crucial 1.55-µm wavelength region. Therefore, unintentionally doped GalnAs/AllnAs MQWs lattice matched to InP were grown by MBE at growth temperatures ranging front 500°C down to 100°C.

© 2000 Optical Society of America