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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2002),
  • paper CFG2

Characterization of MOCVD-grown InNAs/GaAs Quantum Wells

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Abstract

The InNxAs1-x alloy is a very promising material for mid-infrared (3-8 μm) emitters and detectors. With a single exception of recently reported MOCVD growth of InNAs using plasma-cracked ammonia source,1 all studies of InNAs utilized plasma-source MBE2,3 and related techniques, such as gas-source MBE.4 In this paper, we report a successful MOCVD growth of InNAs using di- methylhydrazine (DMHy) as nitrogen source.

© 2002 Optical Society of America

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